负载电容CL=8pF 8MHz晶振(SMD3225)测试数据及温测数据

负载电容CL=8pF 8MHz晶振(SMD3225)测试数据及温测数据

(晶诺威科技产8MHz无源贴片晶振SMD3225-4P尺寸及内部电路连接图)

晶诺威科技产负载电容CL=8pF 8MHz晶振(SMD3225)主要电气参数如下:

Nominal frequency标称频率: 8MHz

Mode of oscillation振荡模式: fundamental基频

Load capacitance负载电容: 8pF

Frequency tolerance调整频差: ±10ppm

Frequency stability频率稳定度: ±20ppm (with working temperature reference to 25℃)

Working temperature range工作温度范围: -40~+85℃

Drive level激励功率: 100μw

Series resonant resistance RR等效阻抗: 180Ω

Shunt capacitance C0静电容: 3pF

Aging老化率: 3ppm/yr.

Storage temperature range存储温度范围: -55~125℃

Unit weight晶振单体重量: 0.02±0.005g

常温(@25℃)测试数据:8MHz晶振(SMD3225 8pF)

负载电容CL=8pF 8MHz晶振(SMD3225)测试数据及温测数据

温测(-40~+85℃)数据:8MHz晶振(SMD3225 8pF)

负载电容CL=8pF 8MHz晶振(SMD3225)测试数据及温测数据

 

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